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In2te3 ferroelectric

WebOct 30, 2024 · Both ferroelectric domains with opposite polarization and the tested amplitude and phase curve proved that this semiconductor exhibits hysteresis behavior during polarization. In the α -In 2 Se 3 /WSe 2 vertical heterostructure device, the switchable diode effect and nonvolatile memory phenomenon showed a high on/off ratio and a small ... WebJan 1, 2005 · In the present paper, measurements of the electrical conductivity, the Hall coefficient and the dielectric constant in Ga 2 Te 3 was reported. Our main conclusions were: 1. Ga 2 Te 3 crystal is a promising n-type semiconductor. 2. The energy gap for that compound is 1.21 eV, while the activation energy of donors is 0.11 eV. 3.

[2303.03852] Electrically tunable Gilbert damping in van der Waals ...

WebOct 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be realized for the graphene/In 2 Te 3 heterostructures by switching the polarity of In 2 Te 3. WebDec 21, 2015 · The Bi2Te3/In2Te3 interface is determined as coherent, and the crystallographic orientation between the two phases is determined as «2¯11»In2Te3//«11¯00»Bi2Te3, {111}In2Te3// {0001}Bi2Te3. No... date of birth and time astrology https://phillybassdent.com

Tuning the electronic properties of two dimensional InSe/In2

WebThe stable ferroelectricity of 2D α In 2 Se 3 is attributed to its unique re-bonding mechanism and the locking between polarizations in the OOP and IP directions, rather than the long-range Coulomb interactions in conventional displacement-type ferroelectrics. WebOct 12, 2016 · Abstract A series of In 2 Te 3 thin films with various thicknesses was prepared on fused quartz substrate using a radio-frequency magnetron sputtering … biz2credit customer service phone number

Controllable Schottky barriers by ferroelectric switching in …

Category:(PDF) Study on Electronic Structure of β-In2Te3 Thermoelectric ...

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In2te3 ferroelectric

Non-volatile electric control of magnetic and ... - ResearchGate

WebJul 13, 2024 · DFT confirms that β-In 2 Se 3 is unstable to a ferroelectric distortion along the threefold high-symmetry directions. However, the exact structure of the large unit-cell … WebAbstract. van der Waals layered α-In 2 Se 3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an …

In2te3 ferroelectric

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WebJan 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be... WebA theoretical design for an ON–OFF switchable HER catalyst using the two-dimensional ferroelectric (2D-FE) III 2 VI 3 compound In 2 Se 3 is reported in this paper. With vertical stacking of the basal plane of In 2 Se 3 on top of the transition metal cobalt, a set of ab initio calculations reveals that the reversible polarization switching of In 2 Se 3 can turn the …

WebFeb 1, 2024 · When stacking a Bi 2 Se 3 layer on top of a α -In 2 Se 3 ferroelectric layer, two different arrangements can be obtained, noted hereafter G1 and G 2, depending on the direction of the polarization vector: in the G 1 configuration, the spontaneous out-of-plane electric polarization P is pointing towards Bi 2 Se 3 while in the configuration G 2 it … WebUtilizing a model for point defect scattering, we analyze the origin of the low thermal conductivity in SnTe-In 2 Te 3 and attribute it mainly to the strong vacancy originated phonon scattering between Sn atoms and the vacancies introduced by In 2 Te 3 alloying and partly to the interfacial scattering by In-rich nanoprecipitates present in SnTe …

WebOct 6, 2024 · Recently, a new class of 2D ferroelectric materials, M 2 X 3 (M = Al, Ga, In; X = S, Se, Te), has been theoretically proposed, and a few of these materials have been … WebJul 25, 2024 · The ferroelectric properties of the γ-In 2 Se 3, on the other hand, have not been experimentally proven so far even though it has a non-centrosymmetric crystal …

WebHere, we propose that, in 2D materials with out-of-plane ferroelectricity, the antibonding nature of the valence band maximum and conduction band minimum and polarized charge distribution induced by ferroelectricity give rise to giant changes of the bandgap under curvature strain field.

WebJun 1, 2024 · Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film … biy y offersWebAug 1, 2024 · The reversible polarization of ferroelectric semiconductor In 2 Se 3 can be used to realize the tunable photoelectric properties of the heterostructures. In this work, we construct the two-dimensional (2D) Janus WSSe/In 2 Se 3 van der Waals heterostructures (vdWHs), where Janus WSSe monolayer has an intrinsic out-of-plane dipole moment. First … date of birth and zodiacWebNov 10, 2024 · To illustrate the underlying mechanism of the specific alignment of ferroelectric polarizations in leading to distinct frictions of the present systems, we first analyze the energy band structure of 1QL In 2 Se 3 in Figure S7 in the Supporting Information, which exhibits semiconducting characteristic with an energy bandgap of 0.78 … biz2credit loan forgivenessWebDec 12, 2024 · The correlated polymorphism and ferroelectricity in 2D In 2 Se 3 provide vast opportunities in tailoring the FE structures and … biy williams investment companyWebFeb 9, 2024 · Indium selenide (In 2 Se 3) is an attractive layered semiconductor material with promising optoelectronic and piezoelectric applications. In this work, single-crystalline α -In 2 Se 3 nanobelts are synthesized using a catalyst-free chemical vapor deposition method through the direct selenization of In 2 O 3 powders. date of birth anne frankWebHere, the ferroelectric semiconducting nature of alpha-In 2 Se 3 is utilized to design vdWHs based on two-dimensional transition metal dichalcogenides (TMDs)/alpha-In 2 Se 3 , … date of birth anthony rizzoWebJan 1, 2005 · Ga 2 Te 3 single crystals were grown by a modification of the travelling heater method technique (THM). The samples used in this work were prepared by this new … biz2credit ppp forgiveness application